Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation

The spheroidization behavior of the nano-primary silicon phase induced by Nd under high-current pulsed electron beam (HCPEB) irradiation was investigated in this study. The study results revealed that, compared to the Al–17.5Si alloy, spheroidized nano-primary silicon phase emerged in the alloy’s HC...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Liang Hu, Kui Li, Bo Gao, Ning Xu, Zhuang Liu, Yue Sun, Ying Zhang, Pengfei Xing
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
Acceso en línea:https://doaj.org/article/9b2d59950605411ea86b9857a17e9ffc
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:9b2d59950605411ea86b9857a17e9ffc
record_format dspace
spelling oai:doaj.org-article:9b2d59950605411ea86b9857a17e9ffc2021-11-25T17:16:56ZSpheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation10.3390/coatings111114082079-6412https://doaj.org/article/9b2d59950605411ea86b9857a17e9ffc2021-11-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1408https://doaj.org/toc/2079-6412The spheroidization behavior of the nano-primary silicon phase induced by Nd under high-current pulsed electron beam (HCPEB) irradiation was investigated in this study. The study results revealed that, compared to the Al–17.5Si alloy, spheroidized nano-primary silicon phase emerged in the alloy’s HCPEB-irradiated surface layer due to the presence of Nd. Because Nd was abundantly enriched on the fast-growing silicon crystal plane, its surface tension was reduced under the extreme undercooling caused by HCPEB irradiation, causing the growth velocity of each crystal plane to be the same and spherical nanometers of silicon to appear. The spheroidization of nano-primary silicon phases occurred in the remelted layer. The microhardness test revealed that Nd could depress the microhardness of the Al matrix at the same number of pulses, but conversely increase the microhardness of the primary silicon phase, compared to the Al–17.5Si alloy. The tribological test showed that the presence of spherical nano-primary silicon could significantly improve the alloy’s tribological property.Liang HuKui LiBo GaoNing XuZhuang LiuYue SunYing ZhangPengfei XingMDPI AGarticlehigh-current pulsed electron beamspheroidization of nano-primary siliconAl–17.5Si–0.3Nd alloyelement diffusion effecttribological propertyEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1408, p 1408 (2021)
institution DOAJ
collection DOAJ
language EN
topic high-current pulsed electron beam
spheroidization of nano-primary silicon
Al–17.5Si–0.3Nd alloy
element diffusion effect
tribological property
Engineering (General). Civil engineering (General)
TA1-2040
spellingShingle high-current pulsed electron beam
spheroidization of nano-primary silicon
Al–17.5Si–0.3Nd alloy
element diffusion effect
tribological property
Engineering (General). Civil engineering (General)
TA1-2040
Liang Hu
Kui Li
Bo Gao
Ning Xu
Zhuang Liu
Yue Sun
Ying Zhang
Pengfei Xing
Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation
description The spheroidization behavior of the nano-primary silicon phase induced by Nd under high-current pulsed electron beam (HCPEB) irradiation was investigated in this study. The study results revealed that, compared to the Al–17.5Si alloy, spheroidized nano-primary silicon phase emerged in the alloy’s HCPEB-irradiated surface layer due to the presence of Nd. Because Nd was abundantly enriched on the fast-growing silicon crystal plane, its surface tension was reduced under the extreme undercooling caused by HCPEB irradiation, causing the growth velocity of each crystal plane to be the same and spherical nanometers of silicon to appear. The spheroidization of nano-primary silicon phases occurred in the remelted layer. The microhardness test revealed that Nd could depress the microhardness of the Al matrix at the same number of pulses, but conversely increase the microhardness of the primary silicon phase, compared to the Al–17.5Si alloy. The tribological test showed that the presence of spherical nano-primary silicon could significantly improve the alloy’s tribological property.
format article
author Liang Hu
Kui Li
Bo Gao
Ning Xu
Zhuang Liu
Yue Sun
Ying Zhang
Pengfei Xing
author_facet Liang Hu
Kui Li
Bo Gao
Ning Xu
Zhuang Liu
Yue Sun
Ying Zhang
Pengfei Xing
author_sort Liang Hu
title Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation
title_short Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation
title_full Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation
title_fullStr Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation
title_full_unstemmed Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation
title_sort spheroidization behavior of nano-primary silicon induced by neodymium under high-current pulsed electron beam irradiation
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/9b2d59950605411ea86b9857a17e9ffc
work_keys_str_mv AT lianghu spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
AT kuili spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
AT bogao spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
AT ningxu spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
AT zhuangliu spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
AT yuesun spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
AT yingzhang spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
AT pengfeixing spheroidizationbehaviorofnanoprimarysiliconinducedbyneodymiumunderhighcurrentpulsedelectronbeamirradiation
_version_ 1718412548193124352