On the influence of interface charging dynamics and stressing conditions in strained silicon devices
Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrie...
Saved in:
Main Authors: | , , |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2017
|
Subjects: | |
Online Access: | https://doaj.org/article/9b5224f63e73455aa824fe69d58a8a21 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|