On the influence of interface charging dynamics and stressing conditions in strained silicon devices
Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrie...
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| Auteurs principaux: | , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2017
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/9b5224f63e73455aa824fe69d58a8a21 |
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