On the influence of interface charging dynamics and stressing conditions in strained silicon devices

Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrie...

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Autores principales:	Irene Olivares, Todora Angelova, Pablo Sanchis
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/9b5224f63e73455aa824fe69d58a8a21
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spelling	oai:doaj.org-article:9b5224f63e73455aa824fe69d58a8a212021-12-02T16:06:56ZOn the influence of interface charging dynamics and stressing conditions in strained silicon devices10.1038/s41598-017-05067-92045-2322https://doaj.org/article/9b5224f63e73455aa824fe69d58a8a212017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05067-9https://doaj.org/toc/2045-2322Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier effects. A first evidence is the appearance of a variable optical absorption with the applied voltage that should not occur in case of having a purely electro-optic Pockels effect. However, hysteresis and saturation effects are also observed. We demonstrate that such effects are mainly due to the carrier trapping dynamics at the interface between the silicon and the silicon nitride and their influence on the silicon nitride charge. This theory is further confirmed by analyzing identical devices but with the silicon nitride cladding layer optimized to have intrinsic stresses of opposite sign and magnitude. The latter is achieved by a post annealing process which produces a defect healing and consequently a reduction of the silicon nitride charge. Raman measurements are also carried out to confirm the obtained results.Irene OlivaresTodora AngelovaPablo SanchisNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Irene Olivares Todora Angelova Pablo Sanchis On the influence of interface charging dynamics and stressing conditions in strained silicon devices
description	Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrier effects. A first evidence is the appearance of a variable optical absorption with the applied voltage that should not occur in case of having a purely electro-optic Pockels effect. However, hysteresis and saturation effects are also observed. We demonstrate that such effects are mainly due to the carrier trapping dynamics at the interface between the silicon and the silicon nitride and their influence on the silicon nitride charge. This theory is further confirmed by analyzing identical devices but with the silicon nitride cladding layer optimized to have intrinsic stresses of opposite sign and magnitude. The latter is achieved by a post annealing process which produces a defect healing and consequently a reduction of the silicon nitride charge. Raman measurements are also carried out to confirm the obtained results.
format	article
author	Irene Olivares Todora Angelova Pablo Sanchis
author_facet	Irene Olivares Todora Angelova Pablo Sanchis
author_sort	Irene Olivares
title	On the influence of interface charging dynamics and stressing conditions in strained silicon devices
title_short	On the influence of interface charging dynamics and stressing conditions in strained silicon devices
title_full	On the influence of interface charging dynamics and stressing conditions in strained silicon devices
title_fullStr	On the influence of interface charging dynamics and stressing conditions in strained silicon devices
title_full_unstemmed	On the influence of interface charging dynamics and stressing conditions in strained silicon devices
title_sort	on the influence of interface charging dynamics and stressing conditions in strained silicon devices
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/9b5224f63e73455aa824fe69d58a8a21
work_keys_str_mv	AT ireneolivares ontheinfluenceofinterfacechargingdynamicsandstressingconditionsinstrainedsilicondevices AT todoraangelova ontheinfluenceofinterfacechargingdynamicsandstressingconditionsinstrainedsilicondevices AT pablosanchis ontheinfluenceofinterfacechargingdynamicsandstressingconditionsinstrainedsilicondevices
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On the influence of interface charging dynamics and stressing conditions in strained silicon devices

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