On the influence of interface charging dynamics and stressing conditions in strained silicon devices

Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrie...

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Autores principales: Irene Olivares, Todora Angelova, Pablo Sanchis
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/9b5224f63e73455aa824fe69d58a8a21
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