Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient condition...

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Autores principales: Feng-Shou Yang, Mengjiao Li, Mu-Pai Lee, I-Ying Ho, Jiann-Yeu Chen, Haifeng Ling, Yuanzhe Li, Jen-Kuei Chang, Shih-Hsien Yang, Yuan-Ming Chang, Ko-Chun Lee, Yi-Chia Chou, Ching-Hwa Ho, Wenwu Li, Chen-Hsin Lien, Yen-Fu Lin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Science
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Acceso en línea:https://doaj.org/article/9c495409e3134f3f922e030805f22403
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https://doaj.org/article/9c495409e3134f3f922e030805f22403

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