Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient condition...

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Autores principales:	Feng-Shou Yang, Mengjiao Li, Mu-Pai Lee, I-Ying Ho, Jiann-Yeu Chen, Haifeng Ling, Yuanzhe Li, Jen-Kuei Chang, Shih-Hsien Yang, Yuan-Ming Chang, Ko-Chun Lee, Yi-Chia Chou, Ching-Hwa Ho, Wenwu Li, Chen-Hsin Lien, Yen-Fu Lin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/9c495409e3134f3f922e030805f22403
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spelling	oai:doaj.org-article:9c495409e3134f3f922e030805f224032021-12-02T17:47:22ZOxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features10.1038/s41467-020-16766-92041-1723https://doaj.org/article/9c495409e3134f3f922e030805f224032020-06-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-16766-9https://doaj.org/toc/2041-1723Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient conditions.Feng-Shou YangMengjiao LiMu-Pai LeeI-Ying HoJiann-Yeu ChenHaifeng LingYuanzhe LiJen-Kuei ChangShih-Hsien YangYuan-Ming ChangKo-Chun LeeYi-Chia ChouChing-Hwa HoWenwu LiChen-Hsin LienYen-Fu LinNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Feng-Shou Yang Mengjiao Li Mu-Pai Lee I-Ying Ho Jiann-Yeu Chen Haifeng Ling Yuanzhe Li Jen-Kuei Chang Shih-Hsien Yang Yuan-Ming Chang Ko-Chun Lee Yi-Chia Chou Ching-Hwa Ho Wenwu Li Chen-Hsin Lien Yen-Fu Lin Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
description	Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient conditions.
format	article
author	Feng-Shou Yang Mengjiao Li Mu-Pai Lee I-Ying Ho Jiann-Yeu Chen Haifeng Ling Yuanzhe Li Jen-Kuei Chang Shih-Hsien Yang Yuan-Ming Chang Ko-Chun Lee Yi-Chia Chou Ching-Hwa Ho Wenwu Li Chen-Hsin Lien Yen-Fu Lin
author_facet	Feng-Shou Yang Mengjiao Li Mu-Pai Lee I-Ying Ho Jiann-Yeu Chen Haifeng Ling Yuanzhe Li Jen-Kuei Chang Shih-Hsien Yang Yuan-Ming Chang Ko-Chun Lee Yi-Chia Chou Ching-Hwa Ho Wenwu Li Chen-Hsin Lien Yen-Fu Lin
author_sort	Feng-Shou Yang
title	Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
title_short	Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
title_full	Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
title_fullStr	Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
title_full_unstemmed	Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
title_sort	oxidation-boosted charge trapping in ultra-sensitive van der waals materials for artificial synaptic features
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/9c495409e3134f3f922e030805f22403
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Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

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