A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Abstract In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing the width of the opening, the threshold voltage o...

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Autores principales: Yang Liu, Yuanjie Lv, Shuoshuo Guo, Zhengfang Luan, Aijie Cheng, Zhaojun Lin, Yongxiong Yang, Guangyuan Jiang, Yan Zhou
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/9c65e83a6bd44084aa99047da9a28750
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