A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Abstract In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing the width of the opening, the threshold voltage o...

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Autores principales:	Yang Liu, Yuanjie Lv, Shuoshuo Guo, Zhengfang Luan, Aijie Cheng, Zhaojun Lin, Yongxiong Yang, Guangyuan Jiang, Yan Zhou
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/9c65e83a6bd44084aa99047da9a28750
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spelling	oai:doaj.org-article:9c65e83a6bd44084aa99047da9a287502021-11-21T12:23:54ZA novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology10.1038/s41598-021-01917-92045-2322https://doaj.org/article/9c65e83a6bd44084aa99047da9a287502021-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-01917-9https://doaj.org/toc/2045-2322Abstract In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing the width of the opening, the threshold voltage of the device could be easily modulated across a larger range. The open-gate device had two working modes with different transconductance. When the gate-source voltage V GS ≤ − 4.5 V, only the open region was conductive, and a new working mechanism modulated the channel current. Corresponding theoretical analysis and calculations showed that its saturation mechanism was related to a virtual gate formed by electron injection onto the surface. Also, the gate-source voltage modulated the open channel current by changing the channel electron mobility through polarization Coulomb field scattering. When used as class-A voltage amplifiers, open-gate devices can achieve effective voltage amplification with very low power consumption.Yang LiuYuanjie LvShuoshuo GuoZhengfang LuanAijie ChengZhaojun LinYongxiong YangGuangyuan JiangYan ZhouNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yang Liu Yuanjie Lv Shuoshuo Guo Zhengfang Luan Aijie Cheng Zhaojun Lin Yongxiong Yang Guangyuan Jiang Yan Zhou A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
description	Abstract In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology was fabricated. Sample transistors of different structures and sizes were constructed. Through measurements, it was found that by changing the width of the opening, the threshold voltage of the device could be easily modulated across a larger range. The open-gate device had two working modes with different transconductance. When the gate-source voltage V GS ≤ − 4.5 V, only the open region was conductive, and a new working mechanism modulated the channel current. Corresponding theoretical analysis and calculations showed that its saturation mechanism was related to a virtual gate formed by electron injection onto the surface. Also, the gate-source voltage modulated the open channel current by changing the channel electron mobility through polarization Coulomb field scattering. When used as class-A voltage amplifiers, open-gate devices can achieve effective voltage amplification with very low power consumption.
format	article
author	Yang Liu Yuanjie Lv Shuoshuo Guo Zhengfang Luan Aijie Cheng Zhaojun Lin Yongxiong Yang Guangyuan Jiang Yan Zhou
author_facet	Yang Liu Yuanjie Lv Shuoshuo Guo Zhengfang Luan Aijie Cheng Zhaojun Lin Yongxiong Yang Guangyuan Jiang Yan Zhou
author_sort	Yang Liu
title	A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
title_short	A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
title_full	A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
title_fullStr	A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
title_full_unstemmed	A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
title_sort	novel algan/gan heterostructure field-effect transistor based on open-gate technology
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/9c65e83a6bd44084aa99047da9a28750
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A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

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