Cita APA (7a ed.)

Sung, J., Jeong, J., Ko, W., Byun, J., Lee, H., & Lee, G. (2021). High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. MDPI AG.

Cita Chicago Style (17a ed.)

Sung, Jae-Young, Jun-Kyo Jeong, Woon-San Ko, Jun-Ho Byun, Hi-Deok Lee, y Ga-Won Lee. High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. MDPI AG, 2021.

Cita MLA (8a ed.)

Sung, Jae-Young, et al. High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. MDPI AG, 2021.