High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications
In this study, the deuterium passivation effect of silicon nitride (Si<sub>3</sub>N<sub>4</sub>) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si<sub>3</sub>N<sub>4<...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9de899bdf1e04bddb3e48ab30e7ddd08 |
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