Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm...
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| Autores principales: | , , , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/9e00e5db8f0e48bf96f67c820d1c2ba7 |
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| Sumario: | Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm |
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