Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm...

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Autores principales: Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee, Arend M. van der Zande
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/9e00e5db8f0e48bf96f67c820d1c2ba7
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spelling oai:doaj.org-article:9e00e5db8f0e48bf96f67c820d1c2ba72021-12-02T15:33:42ZAtomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures10.1038/s41467-018-06524-32041-1723https://doaj.org/article/9e00e5db8f0e48bf96f67c820d1c2ba72018-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-06524-3https://doaj.org/toc/2041-1723Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µmJangyup SonJunyoung KwonSunPhil KimYinchuan LvJaehyung YuJong-Young LeeHuije RyuKenji WatanabeTakashi TaniguchiRita Garrido-MenachoNadya MasonElif ErtekinPinshane Y. HuangGwan-Hyoung LeeArend M. van der ZandeNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Jangyup Son
Junyoung Kwon
SunPhil Kim
Yinchuan Lv
Jaehyung Yu
Jong-Young Lee
Huije Ryu
Kenji Watanabe
Takashi Taniguchi
Rita Garrido-Menacho
Nadya Mason
Elif Ertekin
Pinshane Y. Huang
Gwan-Hyoung Lee
Arend M. van der Zande
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
description Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm
format article
author Jangyup Son
Junyoung Kwon
SunPhil Kim
Yinchuan Lv
Jaehyung Yu
Jong-Young Lee
Huije Ryu
Kenji Watanabe
Takashi Taniguchi
Rita Garrido-Menacho
Nadya Mason
Elif Ertekin
Pinshane Y. Huang
Gwan-Hyoung Lee
Arend M. van der Zande
author_facet Jangyup Son
Junyoung Kwon
SunPhil Kim
Yinchuan Lv
Jaehyung Yu
Jong-Young Lee
Huije Ryu
Kenji Watanabe
Takashi Taniguchi
Rita Garrido-Menacho
Nadya Mason
Elif Ertekin
Pinshane Y. Huang
Gwan-Hyoung Lee
Arend M. van der Zande
author_sort Jangyup Son
title Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_short Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_full Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_fullStr Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_full_unstemmed Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
title_sort atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/9e00e5db8f0e48bf96f67c820d1c2ba7
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