Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm...
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Nature Portfolio
2018
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oai:doaj.org-article:9e00e5db8f0e48bf96f67c820d1c2ba72021-12-02T15:33:42ZAtomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures10.1038/s41467-018-06524-32041-1723https://doaj.org/article/9e00e5db8f0e48bf96f67c820d1c2ba72018-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-06524-3https://doaj.org/toc/2041-1723Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µmJangyup SonJunyoung KwonSunPhil KimYinchuan LvJaehyung YuJong-Young LeeHuije RyuKenji WatanabeTakashi TaniguchiRita Garrido-MenachoNadya MasonElif ErtekinPinshane Y. HuangGwan-Hyoung LeeArend M. van der ZandeNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-9 (2018) |
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DOAJ |
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DOAJ |
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EN |
topic |
Science Q |
spellingShingle |
Science Q Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
description |
Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm |
format |
article |
author |
Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande |
author_facet |
Jangyup Son Junyoung Kwon SunPhil Kim Yinchuan Lv Jaehyung Yu Jong-Young Lee Huije Ryu Kenji Watanabe Takashi Taniguchi Rita Garrido-Menacho Nadya Mason Elif Ertekin Pinshane Y. Huang Gwan-Hyoung Lee Arend M. van der Zande |
author_sort |
Jangyup Son |
title |
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
title_short |
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
title_full |
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
title_fullStr |
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
title_full_unstemmed |
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
title_sort |
atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures |
publisher |
Nature Portfolio |
publishDate |
2018 |
url |
https://doaj.org/article/9e00e5db8f0e48bf96f67c820d1c2ba7 |
work_keys_str_mv |
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1718387040465190912 |