High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion

Abstract Synthetic antiferromagnets (SAFs), composed of Ru spacer with a Re insertion layer, reveal superior thermal stability up to 450 °C annealing, making the back-end of line process a wider manufacturing window and tolerance to integrate the perpendicular magnetic tunneling junctions (P-MTJs) i...

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Autores principales:	Chun-Liang Yang, Chih-Huang Lai
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/9ebcece8d27c46ffb3e962415a426b1b
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spelling	oai:doaj.org-article:9ebcece8d27c46ffb3e962415a426b1b2021-12-02T16:31:51ZHigh thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion10.1038/s41598-021-94640-42045-2322https://doaj.org/article/9ebcece8d27c46ffb3e962415a426b1b2021-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-94640-4https://doaj.org/toc/2045-2322Abstract Synthetic antiferromagnets (SAFs), composed of Ru spacer with a Re insertion layer, reveal superior thermal stability up to 450 °C annealing, making the back-end of line process a wider manufacturing window and tolerance to integrate the perpendicular magnetic tunneling junctions (P-MTJs) into CMOS process. The coupling strength decays significantly for SAFs with single Ru spacer after annealing above 400 °C. Due to the characteristics of refractory metals, Re can behave as a diffusion barrier during annealing. Furthermore, the Re spacer can still keep reasonable RKKY coupling strength. Therefore, the SAFs with Ru/Re composite spacers exhibit higher RKKY coupling strength than Ru spacers after 450 °C annealing. In addition, we discovered the different enhancements for the upper and lower interfacial Re insertion, which was attributed to the varied defect formation at interfaces. The stacking fault was formed at the upper Ru/Co interface in as-deposited state. When Re was inserted at the upper interface, the diffusion between Co and Ru was significantly suppressed and the stacking fault can be eliminated during annealing, leading to enhanced interlayer coupling. Through the interfacial engineering, we may have more degrees of freedom to tune the SAF performance and thus enhance process compatibility of P-MTJ to the CMOS process.Chun-Liang YangChih-Huang LaiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chun-Liang Yang Chih-Huang Lai High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion
description	Abstract Synthetic antiferromagnets (SAFs), composed of Ru spacer with a Re insertion layer, reveal superior thermal stability up to 450 °C annealing, making the back-end of line process a wider manufacturing window and tolerance to integrate the perpendicular magnetic tunneling junctions (P-MTJs) into CMOS process. The coupling strength decays significantly for SAFs with single Ru spacer after annealing above 400 °C. Due to the characteristics of refractory metals, Re can behave as a diffusion barrier during annealing. Furthermore, the Re spacer can still keep reasonable RKKY coupling strength. Therefore, the SAFs with Ru/Re composite spacers exhibit higher RKKY coupling strength than Ru spacers after 450 °C annealing. In addition, we discovered the different enhancements for the upper and lower interfacial Re insertion, which was attributed to the varied defect formation at interfaces. The stacking fault was formed at the upper Ru/Co interface in as-deposited state. When Re was inserted at the upper interface, the diffusion between Co and Ru was significantly suppressed and the stacking fault can be eliminated during annealing, leading to enhanced interlayer coupling. Through the interfacial engineering, we may have more degrees of freedom to tune the SAF performance and thus enhance process compatibility of P-MTJ to the CMOS process.
format	article
author	Chun-Liang Yang Chih-Huang Lai
author_facet	Chun-Liang Yang Chih-Huang Lai
author_sort	Chun-Liang Yang
title	High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion
title_short	High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion
title_full	High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion
title_fullStr	High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion
title_full_unstemmed	High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion
title_sort	high thermal durability of ru-based synthetic antiferromagnet by interfacial engineering with re insertion
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/9ebcece8d27c46ffb3e962415a426b1b
work_keys_str_mv	AT chunliangyang highthermaldurabilityofrubasedsyntheticantiferromagnetbyinterfacialengineeringwithreinsertion AT chihhuanglai highthermaldurabilityofrubasedsyntheticantiferromagnetbyinterfacialengineeringwithreinsertion
_version_	1718383826029248512

High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion

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