High temperature AlInP X-ray spectrometers

Abstract Two custom-made Al0.52In0.48P p+-i-n+ mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range 0 °C to 100 °C. Each photodiode was then investigated as a high-temperature-tol...

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Autores principales: S. Zhao, S. Butera, G. Lioliou, A. B. Krysa, A. M. Barnett
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/a19c197e514844ad967ccd5bd83df87e
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