Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device

Abstract Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cro...

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Autores principales:	Shu-Jui Chang, Po-Chun Chang, Wen-Chin Lin, Shao-Hua Lo, Liang-Chun Chang, Shang-Fan Lee, Yuan-Chieh Tseng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a1c11dcd4e7f4d26b916a6adeefaba67
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spelling	oai:doaj.org-article:a1c11dcd4e7f4d26b916a6adeefaba672021-12-02T15:05:10ZVoltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device10.1038/s41598-017-00547-42045-2322https://doaj.org/article/a1c11dcd4e7f4d26b916a6adeefaba672017-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00547-4https://doaj.org/toc/2045-2322Abstract Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.Shu-Jui ChangPo-Chun ChangWen-Chin LinShao-Hua LoLiang-Chun ChangShang-Fan LeeYuan-Chieh TsengNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shu-Jui Chang Po-Chun Chang Wen-Chin Lin Shao-Hua Lo Liang-Chun Chang Shang-Fan Lee Yuan-Chieh Tseng Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device
description	Abstract Using x-ray magnetic spectroscopy with in-situ electrical characterizations, we investigated the effects of external voltage on the spin-electronic and transport properties at the interface of a Fe/ZnO device. Layer-, element-, and spin-resolved information of the device was obtained by cross-tuning of the x-ray mode and photon energy, when voltage was applied. At the early stage of the operation, the device exhibited a low-resistance state featuring robust Fe-O bonds. However, the Fe-O bonds were broken with increasing voltage. Breaking of the Fe-O bonds caused the formation of oxygen vacancies and resulted in a high-resistance state. Such interface reconstruction was coupled to a charge-transfer effect via Fe-O hybridization, which suppressed/enhanced the magnetization/coercivity of Fe electronically. Nevertheless, the interface became stabilized with the metallic phase if the device was continuously polarized. During this stage, the spin-polarization of Fe was enhanced whereas the coercivity was lowered by voltage, but changes of both characteristics were reversible. This stage is desirable for spintronic device applications, owing to a different voltage-induced electronic transition compared to the first stage. The study enabled a straightforward detection of the spin-electronic state at the ferromagnet-semiconductor interface in relation to the transport and reversal properties during operation process of the device.
format	article
author	Shu-Jui Chang Po-Chun Chang Wen-Chin Lin Shao-Hua Lo Liang-Chun Chang Shang-Fan Lee Yuan-Chieh Tseng
author_facet	Shu-Jui Chang Po-Chun Chang Wen-Chin Lin Shao-Hua Lo Liang-Chun Chang Shang-Fan Lee Yuan-Chieh Tseng
author_sort	Shu-Jui Chang
title	Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device
title_short	Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device
title_full	Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device
title_fullStr	Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device
title_full_unstemmed	Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device
title_sort	voltage-induced interface reconstruction and electrical instability of the ferromagnet-semiconductor device
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a1c11dcd4e7f4d26b916a6adeefaba67
work_keys_str_mv	AT shujuichang voltageinducedinterfacereconstructionandelectricalinstabilityoftheferromagnetsemiconductordevice AT pochunchang voltageinducedinterfacereconstructionandelectricalinstabilityoftheferromagnetsemiconductordevice AT wenchinlin voltageinducedinterfacereconstructionandelectricalinstabilityoftheferromagnetsemiconductordevice AT shaohualo voltageinducedinterfacereconstructionandelectricalinstabilityoftheferromagnetsemiconductordevice AT liangchunchang voltageinducedinterfacereconstructionandelectricalinstabilityoftheferromagnetsemiconductordevice AT shangfanlee voltageinducedinterfacereconstructionandelectricalinstabilityoftheferromagnetsemiconductordevice AT yuanchiehtseng voltageinducedinterfacereconstructionandelectricalinstabilityoftheferromagnetsemiconductordevice
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Voltage-induced Interface Reconstruction and Electrical Instability of the Ferromagnet-Semiconductor Device

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