Quantum cascade lasers grown on silicon

Abstract Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will ena...

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Autores principales:	Hoang Nguyen-Van, Alexei N. Baranov, Zeineb Loghmari, Laurent Cerutti, Jean-Baptiste Rodriguez, Julie Tournet, Gregoire Narcy, Guilhem Boissier, Gilles Patriarche, Michael Bahriz, Eric Tournié, Roland Teissier
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/a2e03cf00626472bbfcc40826fc4e18d
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spelling	oai:doaj.org-article:a2e03cf00626472bbfcc40826fc4e18d2021-12-02T12:32:48ZQuantum cascade lasers grown on silicon10.1038/s41598-018-24723-22045-2322https://doaj.org/article/a2e03cf00626472bbfcc40826fc4e18d2018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-24723-2https://doaj.org/toc/2045-2322Abstract Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.Hoang Nguyen-VanAlexei N. BaranovZeineb LoghmariLaurent CeruttiJean-Baptiste RodriguezJulie TournetGregoire NarcyGuilhem BoissierGilles PatriarcheMichael BahrizEric TourniéRoland TeissierNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hoang Nguyen-Van Alexei N. Baranov Zeineb Loghmari Laurent Cerutti Jean-Baptiste Rodriguez Julie Tournet Gregoire Narcy Guilhem Boissier Gilles Patriarche Michael Bahriz Eric Tournié Roland Teissier Quantum cascade lasers grown on silicon
description	Abstract Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.
format	article
author	Hoang Nguyen-Van Alexei N. Baranov Zeineb Loghmari Laurent Cerutti Jean-Baptiste Rodriguez Julie Tournet Gregoire Narcy Guilhem Boissier Gilles Patriarche Michael Bahriz Eric Tournié Roland Teissier
author_facet	Hoang Nguyen-Van Alexei N. Baranov Zeineb Loghmari Laurent Cerutti Jean-Baptiste Rodriguez Julie Tournet Gregoire Narcy Guilhem Boissier Gilles Patriarche Michael Bahriz Eric Tournié Roland Teissier
author_sort	Hoang Nguyen-Van
title	Quantum cascade lasers grown on silicon
title_short	Quantum cascade lasers grown on silicon
title_full	Quantum cascade lasers grown on silicon
title_fullStr	Quantum cascade lasers grown on silicon
title_full_unstemmed	Quantum cascade lasers grown on silicon
title_sort	quantum cascade lasers grown on silicon
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/a2e03cf00626472bbfcc40826fc4e18d
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Quantum cascade lasers grown on silicon

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