High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory
Abstract Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a ph...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2020
|
| Subjects: | |
| Online Access: | https://doaj.org/article/a30904cc19e94eaf90e48eac97ae9b94 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|