Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.

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Bibliographic Details
Main Authors: Woo Young Kim, Hyeon-Don Kim, Teun-Teun Kim, Hyun-Sung Park, Kanghee Lee, Hyun Joo Choi, Seung Hoon Lee, Jaehyeon Son, Namkyoo Park, Bumki Min
Format: article
Language:EN
Published: Nature Portfolio 2016
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Online Access:https://doaj.org/article/a3d38984391f405c82d81f83d4cd8df1
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