Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.

Guardado en:

Detalles Bibliográficos
Autores principales:	Woo Young Kim, Hyeon-Don Kim, Teun-Teun Kim, Hyun-Sung Park, Kanghee Lee, Hyun Joo Choi, Seung Hoon Lee, Jaehyeon Son, Namkyoo Park, Bumki Min
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/a3d38984391f405c82d81f83d4cd8df1
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:a3d38984391f405c82d81f83d4cd8df1
record_format	dspace
spelling	oai:doaj.org-article:a3d38984391f405c82d81f83d4cd8df12021-12-02T14:39:11ZGraphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations10.1038/ncomms104292041-1723https://doaj.org/article/a3d38984391f405c82d81f83d4cd8df12016-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms10429https://doaj.org/toc/2041-1723Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.Woo Young KimHyeon-Don KimTeun-Teun KimHyun-Sung ParkKanghee LeeHyun Joo ChoiSeung Hoon LeeJaehyeon SonNamkyoo ParkBumki MinNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Woo Young Kim Hyeon-Don Kim Teun-Teun Kim Hyun-Sung Park Kanghee Lee Hyun Joo Choi Seung Hoon Lee Jaehyeon Son Namkyoo Park Bumki Min Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
description	Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.
format	article
author	Woo Young Kim Hyeon-Don Kim Teun-Teun Kim Hyun-Sung Park Kanghee Lee Hyun Joo Choi Seung Hoon Lee Jaehyeon Son Namkyoo Park Bumki Min
author_facet	Woo Young Kim Hyeon-Don Kim Teun-Teun Kim Hyun-Sung Park Kanghee Lee Hyun Joo Choi Seung Hoon Lee Jaehyeon Son Namkyoo Park Bumki Min
author_sort	Woo Young Kim
title	Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_short	Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_full	Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_fullStr	Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_full_unstemmed	Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_sort	graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/a3d38984391f405c82d81f83d4cd8df1
work_keys_str_mv	AT wooyoungkim grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT hyeondonkim grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT teunteunkim grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT hyunsungpark grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT kangheelee grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT hyunjoochoi grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT seunghoonlee grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT jaehyeonson grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT namkyoopark grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations AT bumkimin grapheneferroelectricmetadevicesfornonvolatilememoryandreconfigurablelogicgateoperations
_version_	1718390730100047872

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Ejemplares similares