Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
Metamaterial memory devices often require a large stimulus to switch states or suffer from poor thermal stability. Here, the authors fabricate a terahertz metadevice driven by ferroelectric and graphene layers, and obtain multiple level memory devices stable at room temperature.
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2016
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/a3d38984391f405c82d81f83d4cd8df1 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|