Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using <italic>In-Situ</italic> ALD Digital O<sub>3</sub> Treatment

Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using <italic>In-Situ</italic> ALD Digital O<sub>3</sub> Treatment

Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments. <italic>In-situ</italic> digital O<sub>3</sub> treatment in ALD chamber was adopted on the surface of Ge fin sidewall i...

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Autores principales: M.-S. Yeh, G.-L. Luo, F.-J. Hou, P.-J. Sung, C. J. Wang, C.-J. Su, C.-T. WU, Y.-C. Huang, T.-C. Hong, B.-Y. Chen, K.-M. Chen, Y.-C. WU, M. Izawa, M. Miura, M. Morimoto, H. Ishimura, Y.-J. Lee, W.-F. Wu, W.-K. Yeh
Formato: article
Lenguaje:EN
Publicado: IEEE 2018
Materias:
ALD high-k
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">in-situ</italic> digital ozone treatment (IDOT)
CMOS
FinFET
germanium
inverters
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/a5f5f525abe24ceda9f3e6d0178335bc
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