Analysis and Optimization of Defect Generation Due to Mechanical Stress in High-Density SRAM
Static random-access memory (SRAM) is an essential component for realizing large-scale integration (LSI). The future transition to a 48 V DC supply in datacenters and electric vehicles acting as mobile edge servers will increase the demand for a bipolar-complementary metal-oxide semiconductor-double...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/a7cd4cb446024bef9d857380960ef138 |
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