Analysis and Optimization of Defect Generation Due to Mechanical Stress in High-Density SRAM

Static random-access memory (SRAM) is an essential component for realizing large-scale integration (LSI). The future transition to a 48 V DC supply in datacenters and electric vehicles acting as mobile edge servers will increase the demand for a bipolar-complementary metal-oxide semiconductor-double...

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Autores principales: Kazunari Ishimaru, Mizuki Tamura, Osamu Fujii
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/a7cd4cb446024bef9d857380960ef138
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