An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

To accelerate the degradation of critical specifications of CMOS power amplifiers (PAs), this paper proposes a new measurement method that introduces radio frequency (RF) stress in the thermal shock test of CMOS PAs. The experimental results show that the proposed method is effective. The degradatio...

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Autores principales:	Shaohua Zhou, Jian Wang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	Thermal shock test radio frequency stress CMOS power amplifier performance degradation Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/a7ebdc6777c8436186d11fd39a495fba
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id	oai:doaj.org-article:a7ebdc6777c8436186d11fd39a495fba
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spelling	oai:doaj.org-article:a7ebdc6777c8436186d11fd39a495fba2021-11-03T23:00:11ZAn RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier2168-673410.1109/JEDS.2021.3121132https://doaj.org/article/a7ebdc6777c8436186d11fd39a495fba2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9580459/https://doaj.org/toc/2168-6734To accelerate the degradation of critical specifications of CMOS power amplifiers (PAs), this paper proposes a new measurement method that introduces radio frequency (RF) stress in the thermal shock test of CMOS PAs. The experimental results show that the proposed method is effective. The degradation of key PA specifications such as output power and power-added efficiency can accelerate under RF stress. Its degradation speed is faster than that under no RF stress. Possible reasons for the degradation of crucial PA specifications accelerated by RF stress are discussed and analyzed in detail in this paper. The method proposed in this paper can effectively reduce the measurement time and cost to study the degradation of critical specifications of the CMOS-based PA. This method can be used for scientific research on the performance degradation of microwave/RF circuits and devices and aging experiments of electronic products before they leave the factory.Shaohua ZhouJian WangIEEEarticleThermal shock testradio frequency stressCMOS power amplifierperformance degradationElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1024-1029 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Thermal shock test radio frequency stress CMOS power amplifier performance degradation Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Thermal shock test radio frequency stress CMOS power amplifier performance degradation Electrical engineering. Electronics. Nuclear engineering TK1-9971 Shaohua Zhou Jian Wang An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
description	To accelerate the degradation of critical specifications of CMOS power amplifiers (PAs), this paper proposes a new measurement method that introduces radio frequency (RF) stress in the thermal shock test of CMOS PAs. The experimental results show that the proposed method is effective. The degradation of key PA specifications such as output power and power-added efficiency can accelerate under RF stress. Its degradation speed is faster than that under no RF stress. Possible reasons for the degradation of crucial PA specifications accelerated by RF stress are discussed and analyzed in detail in this paper. The method proposed in this paper can effectively reduce the measurement time and cost to study the degradation of critical specifications of the CMOS-based PA. This method can be used for scientific research on the performance degradation of microwave/RF circuits and devices and aging experiments of electronic products before they leave the factory.
format	article
author	Shaohua Zhou Jian Wang
author_facet	Shaohua Zhou Jian Wang
author_sort	Shaohua Zhou
title	An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
title_short	An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
title_full	An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
title_fullStr	An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
title_full_unstemmed	An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
title_sort	rf stress-based thermal shock test method for a cmos power amplifier
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/a7ebdc6777c8436186d11fd39a495fba
work_keys_str_mv	AT shaohuazhou anrfstressbasedthermalshocktestmethodforacmospoweramplifier AT jianwang anrfstressbasedthermalshocktestmethodforacmospoweramplifier AT shaohuazhou rfstressbasedthermalshocktestmethodforacmospoweramplifier AT jianwang rfstressbasedthermalshocktestmethodforacmospoweramplifier
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An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

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