Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np...

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Autores principales: Xiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Liu, Mao-Lin Chen, Xin Liu, Chuan-Kun Jia, Dong-Ming Sun, Xiang-Wei Jiang, Zheng Han, Vincent Bouchiat, Jun-Jie Guo, Jian-Hao Chen, Zhi-Dong Zhang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/a8316fe44cea47809fa391d228df55b7
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