Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np...

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Autores principales:	Xiao-Xi Li, Zhi-Qiang Fan, Pei-Zhi Liu, Mao-Lin Chen, Xin Liu, Chuan-Kun Jia, Dong-Ming Sun, Xiang-Wei Jiang, Zheng Han, Vincent Bouchiat, Jun-Jie Guo, Jian-Hao Chen, Zhi-Dong Zhang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/a8316fe44cea47809fa391d228df55b7
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spelling	oai:doaj.org-article:a8316fe44cea47809fa391d228df55b72021-12-02T17:06:10ZGate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor10.1038/s41467-017-01128-92041-1723https://doaj.org/article/a8316fe44cea47809fa391d228df55b72017-10-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-01128-9https://doaj.org/toc/2041-1723Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np diode behaviour.Xiao-Xi LiZhi-Qiang FanPei-Zhi LiuMao-Lin ChenXin LiuChuan-Kun JiaDong-Ming SunXiang-Wei JiangZheng HanVincent BouchiatJun-Jie GuoJian-Hao ChenZhi-Dong ZhangNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xiao-Xi Li Zhi-Qiang Fan Pei-Zhi Liu Mao-Lin Chen Xin Liu Chuan-Kun Jia Dong-Ming Sun Xiang-Wei Jiang Zheng Han Vincent Bouchiat Jun-Jie Guo Jian-Hao Chen Zhi-Dong Zhang Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
description	Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np diode behaviour.
format	article
author	Xiao-Xi Li Zhi-Qiang Fan Pei-Zhi Liu Mao-Lin Chen Xin Liu Chuan-Kun Jia Dong-Ming Sun Xiang-Wei Jiang Zheng Han Vincent Bouchiat Jun-Jie Guo Jian-Hao Chen Zhi-Dong Zhang
author_facet	Xiao-Xi Li Zhi-Qiang Fan Pei-Zhi Liu Mao-Lin Chen Xin Liu Chuan-Kun Jia Dong-Ming Sun Xiang-Wei Jiang Zheng Han Vincent Bouchiat Jun-Jie Guo Jian-Hao Chen Zhi-Dong Zhang
author_sort	Xiao-Xi Li
title	Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
title_short	Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
title_full	Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
title_fullStr	Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
title_full_unstemmed	Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
title_sort	gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin mos2 transistor
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/a8316fe44cea47809fa391d228df55b7
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Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

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