Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid...

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Autores principales: Xuechao Yu, Peng Yu, Di Wu, Bahadur Singh, Qingsheng Zeng, Hsin Lin, Wu Zhou, Junhao Lin, Kazu Suenaga, Zheng Liu, Qi Jie Wang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/a965dcb4f62f457bbbe06e26743c2d5d
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