Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid...
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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2018
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| Accès en ligne: | https://doaj.org/article/a965dcb4f62f457bbbe06e26743c2d5d |
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| Résumé: | The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics. |
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