Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid...

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Autores principales:	Xuechao Yu, Peng Yu, Di Wu, Bahadur Singh, Qingsheng Zeng, Hsin Lin, Wu Zhou, Junhao Lin, Kazu Suenaga, Zheng Liu, Qi Jie Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/a965dcb4f62f457bbbe06e26743c2d5d
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spelling	oai:doaj.org-article:a965dcb4f62f457bbbe06e26743c2d5d2021-12-02T17:32:04ZAtomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor10.1038/s41467-018-03935-02041-1723https://doaj.org/article/a965dcb4f62f457bbbe06e26743c2d5d2018-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-03935-0https://doaj.org/toc/2041-1723The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics.Xuechao YuPeng YuDi WuBahadur SinghQingsheng ZengHsin LinWu ZhouJunhao LinKazu SuenagaZheng LiuQi Jie WangNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xuechao Yu Peng Yu Di Wu Bahadur Singh Qingsheng Zeng Hsin Lin Wu Zhou Junhao Lin Kazu Suenaga Zheng Liu Qi Jie Wang Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
description	The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics.
format	article
author	Xuechao Yu Peng Yu Di Wu Bahadur Singh Qingsheng Zeng Hsin Lin Wu Zhou Junhao Lin Kazu Suenaga Zheng Liu Qi Jie Wang
author_facet	Xuechao Yu Peng Yu Di Wu Bahadur Singh Qingsheng Zeng Hsin Lin Wu Zhou Junhao Lin Kazu Suenaga Zheng Liu Qi Jie Wang
author_sort	Xuechao Yu
title	Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
title_short	Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
title_full	Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
title_fullStr	Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
title_full_unstemmed	Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
title_sort	atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/a965dcb4f62f457bbbe06e26743c2d5d
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Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor

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