Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects
Abstract Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative...
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| Auteurs principaux: | , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
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Nature Portfolio
2017
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| Accès en ligne: | https://doaj.org/article/aa3a48c9bf124fddb07cb48c20ef97e0 |
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