Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects

Abstract Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative...

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Autores principales:	Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, Margit Zacharias, Michael Wahl, Wolfgang Bock, Alexander Brodyanski, Michael Kopnarski, Keita Nomoto, Jan Valenta, Dirk König
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/aa3a48c9bf124fddb07cb48c20ef97e0
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spelling	oai:doaj.org-article:aa3a48c9bf124fddb07cb48c20ef97e02021-12-02T16:07:00ZBoron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects10.1038/s41598-017-08814-02045-2322https://doaj.org/article/aa3a48c9bf124fddb07cb48c20ef97e02017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-08814-0https://doaj.org/toc/2045-2322Abstract Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped.Daniel HillerJulian López-VidrierSebastian GutschMargit ZachariasMichael WahlWolfgang BockAlexander BrodyanskiMichael KopnarskiKeita NomotoJan ValentaDirk KönigNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Daniel Hiller Julian López-Vidrier Sebastian Gutsch Margit Zacharias Michael Wahl Wolfgang Bock Alexander Brodyanski Michael Kopnarski Keita Nomoto Jan Valenta Dirk König Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects
description	Abstract Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger recombination. In addition, the holes should allow for a non-transient electrical current. However, on the bottom end of the nanoscale, both substitutional incorporation and ionization are subject to significant increase in their respective energies due to confinement and size effects. Nevertheless, successful B-doping of Si nanocrystals was reported for certain structural conditions. Here, we investigate B-doping for small, well-dispersed Si nanocrystals with low and moderate B-concentrations. While small amounts of B-atoms are incorporated into these nanocrystals, they hardly affect their optical or electrical properties. If the B-concentration exceeds ~1 at%, the luminescence quantum yield is significantly quenched, whereas electrical measurements do not reveal free carriers. This observation suggests a photoluminescence quenching mechanism based on B-induced defect states. By means of density functional theory calculations, we prove that B creates multiple states in the bandgap of Si and SiO2. We conclude that non-percolated ultra-small Si nanocrystals cannot be efficiently B-doped.
format	article
author	Daniel Hiller Julian López-Vidrier Sebastian Gutsch Margit Zacharias Michael Wahl Wolfgang Bock Alexander Brodyanski Michael Kopnarski Keita Nomoto Jan Valenta Dirk König
author_facet	Daniel Hiller Julian López-Vidrier Sebastian Gutsch Margit Zacharias Michael Wahl Wolfgang Bock Alexander Brodyanski Michael Kopnarski Keita Nomoto Jan Valenta Dirk König
author_sort	Daniel Hiller
title	Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects
title_short	Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects
title_full	Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects
title_fullStr	Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects
title_full_unstemmed	Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects
title_sort	boron-incorporating silicon nanocrystals embedded in sio2: absence of free carriers vs. b-induced defects
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/aa3a48c9bf124fddb07cb48c20ef97e0
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Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects

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