Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects

Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects

Abstract Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative...

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Autores principales: Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, Margit Zacharias, Michael Wahl, Wolfgang Bock, Alexander Brodyanski, Michael Kopnarski, Keita Nomoto, Jan Valenta, Dirk König
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/aa3a48c9bf124fddb07cb48c20ef97e0
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