Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

Resistive random access memory (RRAM) devices with analog resistive switching are expected to be beneficial for neuromorphic applications, and consecutive voltage sweeps or pulses can be applied to change the device conductance and behave synaptic characteristics. In this paper, RRAM devices with a...

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Autores principales: Kai-Chi Chuang, Chi-Yan Chu, He-Xin Zhang, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, Huang-Chung Cheng
Formato: article
Lenguaje:EN
Publicado: IEEE 2019
Materias:
Resistive random access memory (RRAM)
bilayered dielectric films
synaptic characteristics
diffusion limiting layer (DLL)
conductive filament (CF)
spike-timing-dependent plasticity (STDP)
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c
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https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c

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