APA (7th ed.) Citation

Chuang, K., Chu, C., Zhang, H., Luo, J., Li, W., Li, Y., & Cheng, H. (2019). Impact of the Stacking Order of HfO_{<italic>x</italic>} and AlO_{<italic>x</italic>} Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics. IEEE.

Chicago Style (17th ed.) Citation

Chuang, Kai-Chi, Chi-Yan Chu, He-Xin Zhang, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, and Huang-Chung Cheng. Impact of the Stacking Order of HfO_{<italic>x</italic>} and AlO_{<italic>x</italic>} Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics. IEEE, 2019.

MLA (8th ed.) Citation

Chuang, Kai-Chi, et al. Impact of the Stacking Order of HfO_{<italic>x</italic>} and AlO_{<italic>x</italic>} Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics. IEEE, 2019.