Chuang, K., Chu, C., Zhang, H., Luo, J., Li, W., Li, Y., & Cheng, H. (2019). Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics. IEEE.
Style de citation Chicago (17e éd.)Chuang, Kai-Chi, Chi-Yan Chu, He-Xin Zhang, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, et Huang-Chung Cheng. Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics. IEEE, 2019.
Style de citation MLA (8e éd.)Chuang, Kai-Chi, et al. Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics. IEEE, 2019.