Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

Resistive random access memory (RRAM) devices with analog resistive switching are expected to be beneficial for neuromorphic applications, and consecutive voltage sweeps or pulses can be applied to change the device conductance and behave synaptic characteristics. In this paper, RRAM devices with a...

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Autores principales:	Kai-Chi Chuang, Chi-Yan Chu, He-Xin Zhang, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, Huang-Chung Cheng
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	Resistive random access memory (RRAM) bilayered dielectric films synaptic characteristics diffusion limiting layer (DLL) conductive filament (CF) spike-timing-dependent plasticity (STDP) Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c
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spelling	oai:doaj.org-article:aa4434a21e7041b2b8f993cd181cf99c2021-11-19T00:01:03ZImpact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics2168-673410.1109/JEDS.2019.2915975https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8710273/https://doaj.org/toc/2168-6734Resistive random access memory (RRAM) devices with analog resistive switching are expected to be beneficial for neuromorphic applications, and consecutive voltage sweeps or pulses can be applied to change the device conductance and behave synaptic characteristics. In this paper, RRAM devices with a reverse stacking order of 6-nm-thick HfO<sub><italic>x</italic></sub> and 2-nm-thick AlO<sub><italic>x</italic></sub> dielectric films were fabricated. The device with TiN/Ti/AlO<sub><italic>x</italic></sub>/HfO<sub><italic>x</italic></sub>/TiN stacked layers exhibited digital resistive switching, while the other device with TiN/Ti/HfO<sub><italic>x</italic></sub>/AlO<sub><italic>x</italic></sub>/TiN stacked layers could demonstrate synaptic characteristics that were analog set and reset processes under consecutive positive and negative voltage sweeps or a train of potentiation and depression pulses. Moreover, this device could also implement synaptic learning rules, spike-timing-dependent plasticity (STDP). Varying temperature measurements and linear fittings of the measured data were conducted to analyze current conduction mechanisms. As a result, the variation of resistive switching behavior between these two devices is attributed to the varying effectiveness of the oxygen scavenging ability of the Ti layer when put into contact with either AlO<sub><italic>x</italic></sub> or HfO<sub><italic>x</italic></sub>. Moreover, AlO<sub><italic>x</italic></sub> functioned as a diffusion limiting layer (DLL) in the device with TiN/Ti/HfO<sub><italic>x</italic></sub>/AlO<sub><italic>x</italic></sub>/TiN stacked layers, and gradual modulation of the production and annihilation of oxygen vacancies is the cause of synaptic characteristics.Kai-Chi ChuangChi-Yan ChuHe-Xin ZhangJun-Dao LuoWei-Shuo LiYi-Shao LiHuang-Chung ChengIEEEarticleResistive random access memory (RRAM)bilayered dielectric filmssynaptic characteristicsdiffusion limiting layer (DLL)conductive filament (CF)spike-timing-dependent plasticity (STDP)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 589-595 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Resistive random access memory (RRAM) bilayered dielectric films synaptic characteristics diffusion limiting layer (DLL) conductive filament (CF) spike-timing-dependent plasticity (STDP) Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Resistive random access memory (RRAM) bilayered dielectric films synaptic characteristics diffusion limiting layer (DLL) conductive filament (CF) spike-timing-dependent plasticity (STDP) Electrical engineering. Electronics. Nuclear engineering TK1-9971 Kai-Chi Chuang Chi-Yan Chu He-Xin Zhang Jun-Dao Luo Wei-Shuo Li Yi-Shao Li Huang-Chung Cheng Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
description	Resistive random access memory (RRAM) devices with analog resistive switching are expected to be beneficial for neuromorphic applications, and consecutive voltage sweeps or pulses can be applied to change the device conductance and behave synaptic characteristics. In this paper, RRAM devices with a reverse stacking order of 6-nm-thick HfO<sub><italic>x</italic></sub> and 2-nm-thick AlO<sub><italic>x</italic></sub> dielectric films were fabricated. The device with TiN/Ti/AlO<sub><italic>x</italic></sub>/HfO<sub><italic>x</italic></sub>/TiN stacked layers exhibited digital resistive switching, while the other device with TiN/Ti/HfO<sub><italic>x</italic></sub>/AlO<sub><italic>x</italic></sub>/TiN stacked layers could demonstrate synaptic characteristics that were analog set and reset processes under consecutive positive and negative voltage sweeps or a train of potentiation and depression pulses. Moreover, this device could also implement synaptic learning rules, spike-timing-dependent plasticity (STDP). Varying temperature measurements and linear fittings of the measured data were conducted to analyze current conduction mechanisms. As a result, the variation of resistive switching behavior between these two devices is attributed to the varying effectiveness of the oxygen scavenging ability of the Ti layer when put into contact with either AlO<sub><italic>x</italic></sub> or HfO<sub><italic>x</italic></sub>. Moreover, AlO<sub><italic>x</italic></sub> functioned as a diffusion limiting layer (DLL) in the device with TiN/Ti/HfO<sub><italic>x</italic></sub>/AlO<sub><italic>x</italic></sub>/TiN stacked layers, and gradual modulation of the production and annihilation of oxygen vacancies is the cause of synaptic characteristics.
format	article
author	Kai-Chi Chuang Chi-Yan Chu He-Xin Zhang Jun-Dao Luo Wei-Shuo Li Yi-Shao Li Huang-Chung Cheng
author_facet	Kai-Chi Chuang Chi-Yan Chu He-Xin Zhang Jun-Dao Luo Wei-Shuo Li Yi-Shao Li Huang-Chung Cheng
author_sort	Kai-Chi Chuang
title	Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
title_short	Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
title_full	Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
title_fullStr	Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
title_full_unstemmed	Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
title_sort	impact of the stacking order of hfo<sub><italic>x</italic></sub> and alo<sub><italic>x</italic></sub> dielectric films on rram switching mechanisms to behave digital resistive switching and synaptic characteristics
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c
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Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

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