Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

Impact of the Stacking Order of HfO<sub><italic>x</italic></sub> and AlO<sub><italic>x</italic></sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

Resistive random access memory (RRAM) devices with analog resistive switching are expected to be beneficial for neuromorphic applications, and consecutive voltage sweeps or pulses can be applied to change the device conductance and behave synaptic characteristics. In this paper, RRAM devices with a...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Kai-Chi Chuang, Chi-Yan Chu, He-Xin Zhang, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, Huang-Chung Cheng
Format: article
Langue:EN
Publié: IEEE 2019
Sujets:
Resistive random access memory (RRAM)
bilayered dielectric films
synaptic characteristics
diffusion limiting layer (DLL)
conductive filament (CF)
spike-timing-dependent plasticity (STDP)
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Accès en ligne:https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!

Internet

https://doaj.org/article/aa4434a21e7041b2b8f993cd181cf99c

Documents similaires