Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

In the molecular beam epitaxy of oxide films, the cation (Sn, Ga) or dopant (Sn) incorporation does not follow the vapor pressure of the elemental metal sources but is enhanced by several orders of magnitude for low source temperatures. Using line-of-sight quadrupole mass spectrometry, we identify t...

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Autores principales: Georg Hoffmann, Zongzhe Cheng, Oliver Brandt, Oliver Bierwagen
Formato: article
Lenguaje:EN
Publicado: AIP Publishing LLC 2021
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Acceso en línea:https://doaj.org/article/aaaefc0d72a84e28b136b876393218d9
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