Efficient low-cost solar cells based on ITO-nSi

A vapor phase pyrolysis deposition (VPPD) method has been described in [1] and applied to prepare indium tin oxide (ITO) thin films with thicknesses about 400 nm, with a conductivity of 8.3 • 103 –1 cm–1, and a transparency of 80% in the visible spectral range. The layers have been deposited on the...

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Autor principal:	Curmei, Nicolai
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2016
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/aca8344901b54b14a398384d92a4fc78
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spelling	oai:doaj.org-article:aca8344901b54b14a398384d92a4fc782021-11-21T11:57:53ZEfficient low-cost solar cells based on ITO-nSi 621.472-022.532537-63651810-648Xhttps://doaj.org/article/aca8344901b54b14a398384d92a4fc782016-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2016/article/48845https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365A vapor phase pyrolysis deposition (VPPD) method has been described in [1] and applied to prepare indium tin oxide (ITO) thin films with thicknesses about 400 nm, with a conductivity of 8.3 • 103 –1 cm–1, and a transparency of 80% in the visible spectral range. The layers have been deposited on the (100) surface of the n-type Si wafers with a concentration of 1015 cm–3, and their morphology has been examined. The as-deposited ITO thin films consist of crystallites with a height of 300–400 nm and a width of 100–200 nm. Properties of low-cost Cu/ITO/SiO2/n-Si/n Si/Cu solar cells fabricated by depositing ITO layers on n-Si wafers have been studied. The maximum efficiency has been found to be 13.8%. Curmei, NicolaiD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 15, Iss 1-2, Pp 76-82 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Curmei, Nicolai Efficient low-cost solar cells based on ITO-nSi
description	A vapor phase pyrolysis deposition (VPPD) method has been described in [1] and applied to prepare indium tin oxide (ITO) thin films with thicknesses about 400 nm, with a conductivity of 8.3 • 103 –1 cm–1, and a transparency of 80% in the visible spectral range. The layers have been deposited on the (100) surface of the n-type Si wafers with a concentration of 1015 cm–3, and their morphology has been examined. The as-deposited ITO thin films consist of crystallites with a height of 300–400 nm and a width of 100–200 nm. Properties of low-cost Cu/ITO/SiO2/n-Si/n Si/Cu solar cells fabricated by depositing ITO layers on n-Si wafers have been studied. The maximum efficiency has been found to be 13.8%.
format	article
author	Curmei, Nicolai
author_facet	Curmei, Nicolai
author_sort	Curmei, Nicolai
title	Efficient low-cost solar cells based on ITO-nSi
title_short	Efficient low-cost solar cells based on ITO-nSi
title_full	Efficient low-cost solar cells based on ITO-nSi
title_fullStr	Efficient low-cost solar cells based on ITO-nSi
title_full_unstemmed	Efficient low-cost solar cells based on ITO-nSi
title_sort	efficient low-cost solar cells based on ito-nsi
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2016
url	https://doaj.org/article/aca8344901b54b14a398384d92a4fc78
work_keys_str_mv	AT curmeinicolai efficientlowcostsolarcellsbasedonitonsi
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Efficient low-cost solar cells based on ITO-nSi

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