Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon...

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Main Authors: Qingyong Ren, Chenguang Fu, Qinyi Qiu, Shengnan Dai, Zheyuan Liu, Takatsugu Masuda, Shinichiro Asai, Masato Hagihala, Sanghyun Lee, Shuki Torri, Takashi Kamiyama, Lunhua He, Xin Tong, Claudia Felser, David J. Singh, Tiejun Zhu, Jiong Yang, Jie Ma
Format: article
Language:EN
Published: Nature Portfolio 2020
Subjects:
Science
Q
Online Access:https://doaj.org/article/b1f94823652341c4b8d740f96d55b1f3
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Summary:Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering.

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