Reaction pathway analysis for differences in motion between C-core and Si-core partial dislocation in 3C-SiC
Reaction pathway analysis was carried out to investigate the activation energy barriers of Shockley partial dislocation mobility in 3C-SiC. For each partial dislocation, there are two types of dislocations according to which kind of atom, Si or C, comprises the core edge of the dislocation line. In...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
The Japan Society of Mechanical Engineers
2015
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/b23341665c724d4ca7c4f59b7f43328e |
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