Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects

Though large-scale integration of organic transistors into integrated circuits via 3D stacking is a promising approach, reliable methods of device fabrication are still needed. Here, the authors report a metal interconnect scheme for reliable fabrication of 3D integrated organic transistor circuits.

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Autores principales: Hocheon Yoo, Hongkeun Park, Seunghyun Yoo, Sungmin On, Hyejeong Seong, Sung Gap Im, Jae-Joon Kim
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/b290b85f242a427e9347b3b9aa9fbd52
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Descripción
Sumario:Though large-scale integration of organic transistors into integrated circuits via 3D stacking is a promising approach, reliable methods of device fabrication are still needed. Here, the authors report a metal interconnect scheme for reliable fabrication of 3D integrated organic transistor circuits.