Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects

Though large-scale integration of organic transistors into integrated circuits via 3D stacking is a promising approach, reliable methods of device fabrication are still needed. Here, the authors report a metal interconnect scheme for reliable fabrication of 3D integrated organic transistor circuits.

Guardado en:
Detalles Bibliográficos
Autores principales: Hocheon Yoo, Hongkeun Park, Seunghyun Yoo, Sungmin On, Hyejeong Seong, Sung Gap Im, Jae-Joon Kim
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Q
Acceso en línea:https://doaj.org/article/b290b85f242a427e9347b3b9aa9fbd52
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares