Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects

Though large-scale integration of organic transistors into integrated circuits via 3D stacking is a promising approach, reliable methods of device fabrication are still needed. Here, the authors report a metal interconnect scheme for reliable fabrication of 3D integrated organic transistor circuits.

Saved in:
Bibliographic Details
Main Authors: Hocheon Yoo, Hongkeun Park, Seunghyun Yoo, Sungmin On, Hyejeong Seong, Sung Gap Im, Jae-Joon Kim
Format: article
Language:EN
Published: Nature Portfolio 2019
Subjects:
Q
Online Access:https://doaj.org/article/b290b85f242a427e9347b3b9aa9fbd52
Tags: Add Tag
No Tags, Be the first to tag this record!