High-quality AlN grown with a single substrate temperature below 1200 °C

Abstract 1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH3-flow condition, serving as an alternative for the comm...

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Autores principales: Chun-Pin Huang, Kapil Gupta, Chao-Hung Wang, Chuan-Pu Liu, Kun-Yu Lai
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/b393a420061f4e99ae006e9367826f16
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