High-quality AlN grown with a single substrate temperature below 1200 °C

Abstract 1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH3-flow condition, serving as an alternative for the comm...

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Autores principales:	Chun-Pin Huang, Kapil Gupta, Chao-Hung Wang, Chuan-Pu Liu, Kun-Yu Lai
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/b393a420061f4e99ae006e9367826f16
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spelling	oai:doaj.org-article:b393a420061f4e99ae006e9367826f162021-12-02T15:06:08ZHigh-quality AlN grown with a single substrate temperature below 1200 °C10.1038/s41598-017-07616-82045-2322https://doaj.org/article/b393a420061f4e99ae006e9367826f162017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07616-8https://doaj.org/toc/2045-2322Abstract 1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH3-flow condition, serving as an alternative for the commonly used temperature-varied buffer structure, which is often complicated and time-consuming. Inserting two pulsed-NH3-flow AlN layers in the epitaxial structure not only releases the lattice strain via the formation of three-dimensional nano-islands, but also smoothens the surface with prolonged lateral migration of Al adatoms. This effective growth technique substantially simplifies the manufacture of device-quality AlN.Chun-Pin HuangKapil GuptaChao-Hung WangChuan-Pu LiuKun-Yu LaiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chun-Pin Huang Kapil Gupta Chao-Hung Wang Chuan-Pu Liu Kun-Yu Lai High-quality AlN grown with a single substrate temperature below 1200 °C
description	Abstract 1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH3-flow condition, serving as an alternative for the commonly used temperature-varied buffer structure, which is often complicated and time-consuming. Inserting two pulsed-NH3-flow AlN layers in the epitaxial structure not only releases the lattice strain via the formation of three-dimensional nano-islands, but also smoothens the surface with prolonged lateral migration of Al adatoms. This effective growth technique substantially simplifies the manufacture of device-quality AlN.
format	article
author	Chun-Pin Huang Kapil Gupta Chao-Hung Wang Chuan-Pu Liu Kun-Yu Lai
author_facet	Chun-Pin Huang Kapil Gupta Chao-Hung Wang Chuan-Pu Liu Kun-Yu Lai
author_sort	Chun-Pin Huang
title	High-quality AlN grown with a single substrate temperature below 1200 °C
title_short	High-quality AlN grown with a single substrate temperature below 1200 °C
title_full	High-quality AlN grown with a single substrate temperature below 1200 °C
title_fullStr	High-quality AlN grown with a single substrate temperature below 1200 °C
title_full_unstemmed	High-quality AlN grown with a single substrate temperature below 1200 °C
title_sort	high-quality aln grown with a single substrate temperature below 1200 °c
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/b393a420061f4e99ae006e9367826f16
work_keys_str_mv	AT chunpinhuang highqualityalngrownwithasinglesubstratetemperaturebelow1200c AT kapilgupta highqualityalngrownwithasinglesubstratetemperaturebelow1200c AT chaohungwang highqualityalngrownwithasinglesubstratetemperaturebelow1200c AT chuanpuliu highqualityalngrownwithasinglesubstratetemperaturebelow1200c AT kunyulai highqualityalngrownwithasinglesubstratetemperaturebelow1200c
_version_	1718388604765470720

High-quality AlN grown with a single substrate temperature below 1200 °C

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