Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure

We analysis the RF performance of novel Sc-Doped GaN high-electron-mobility transistors (HEMTs) with asymmetric air-bridge structure by TCAD software. The maximum oscillating frequency (fMAX) which has been achieved in this work is 41.2 GHz and the cutoff frequency (fT) reached 30.2 GHz, while the H...

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Autores principales:	Peng-lin Wang, Hui-qing Sun, Xiao Ding, Zhi-hui Huang, Yuan Li, Fan Xia, Xiao-yu Xia, Miao Zhang, Jian-cheng Ma, Xiu-yang Tan, Liang Xu, Zhi-you Guo
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	GaN Radio frequency Scandium aluminum nitride Small-signal HEMT Physics QC1-999
Acceso en línea:	https://doaj.org/article/b4c2a773ab48443a9d47a7026e00480f
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spelling	oai:doaj.org-article:b4c2a773ab48443a9d47a7026e00480f2021-11-20T05:05:43ZAnalysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure2211-379710.1016/j.rinp.2021.105000https://doaj.org/article/b4c2a773ab48443a9d47a7026e00480f2021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2211379721010032https://doaj.org/toc/2211-3797We analysis the RF performance of novel Sc-Doped GaN high-electron-mobility transistors (HEMTs) with asymmetric air-bridge structure by TCAD software. The maximum oscillating frequency (fMAX) which has been achieved in this work is 41.2 GHz and the cutoff frequency (fT) reached 30.2 GHz, while the HEMT with conventional structure attained to only 12.9 GHz and 9 GHz respectively. This work has been performed on novel p-GaN HEMT device. The air-bridge is designed to be asymmetrical in width and the ScAlN layer is innovatively placed between the AlGaN and GaN layers as part of the heterojunction. It is found that the thickness change of scandium layer will bring great influence on a higher transconductance (from 9.22 × 10−3 S/mm to 3.187 × 10−2 S/mm), lower electron concentration (from 5.01 × 1019/cm3 to 3.16 × 1018/cm3) and higher electron velocity (from 5.52 × 107cm/s to 2.30 × 108cm/s) of the device. In addition, the combined influence of air bridge and scandium layer structure on the capacitance and other parameters were analyzed, which propose a useful approach for improving the DC and RF characteristic of GaN HEMTs.Peng-lin WangHui-qing SunXiao DingZhi-hui HuangYuan LiFan XiaXiao-yu XiaMiao ZhangJian-cheng MaXiu-yang TanLiang XuZhi-you GuoElsevierarticleGaNRadio frequencyScandium aluminum nitrideSmall-signalHEMTPhysicsQC1-999ENResults in Physics, Vol 31, Iss , Pp 105000- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaN Radio frequency Scandium aluminum nitride Small-signal HEMT Physics QC1-999
spellingShingle	GaN Radio frequency Scandium aluminum nitride Small-signal HEMT Physics QC1-999 Peng-lin Wang Hui-qing Sun Xiao Ding Zhi-hui Huang Yuan Li Fan Xia Xiao-yu Xia Miao Zhang Jian-cheng Ma Xiu-yang Tan Liang Xu Zhi-you Guo Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
description	We analysis the RF performance of novel Sc-Doped GaN high-electron-mobility transistors (HEMTs) with asymmetric air-bridge structure by TCAD software. The maximum oscillating frequency (fMAX) which has been achieved in this work is 41.2 GHz and the cutoff frequency (fT) reached 30.2 GHz, while the HEMT with conventional structure attained to only 12.9 GHz and 9 GHz respectively. This work has been performed on novel p-GaN HEMT device. The air-bridge is designed to be asymmetrical in width and the ScAlN layer is innovatively placed between the AlGaN and GaN layers as part of the heterojunction. It is found that the thickness change of scandium layer will bring great influence on a higher transconductance (from 9.22 × 10−3 S/mm to 3.187 × 10−2 S/mm), lower electron concentration (from 5.01 × 1019/cm3 to 3.16 × 1018/cm3) and higher electron velocity (from 5.52 × 107cm/s to 2.30 × 108cm/s) of the device. In addition, the combined influence of air bridge and scandium layer structure on the capacitance and other parameters were analyzed, which propose a useful approach for improving the DC and RF characteristic of GaN HEMTs.
format	article
author	Peng-lin Wang Hui-qing Sun Xiao Ding Zhi-hui Huang Yuan Li Fan Xia Xiao-yu Xia Miao Zhang Jian-cheng Ma Xiu-yang Tan Liang Xu Zhi-you Guo
author_facet	Peng-lin Wang Hui-qing Sun Xiao Ding Zhi-hui Huang Yuan Li Fan Xia Xiao-yu Xia Miao Zhang Jian-cheng Ma Xiu-yang Tan Liang Xu Zhi-you Guo
author_sort	Peng-lin Wang
title	Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
title_short	Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
title_full	Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
title_fullStr	Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
title_full_unstemmed	Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
title_sort	analysis of rf performance of novel sc-doped gan high-electron-mobility transistors with air-bridge structure
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/b4c2a773ab48443a9d47a7026e00480f
work_keys_str_mv	AT penglinwang analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT huiqingsun analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT xiaoding analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT zhihuihuang analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT yuanli analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT fanxia analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT xiaoyuxia analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT miaozhang analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT jianchengma analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT xiuyangtan analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT liangxu analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure AT zhiyouguo analysisofrfperformanceofnovelscdopedganhighelectronmobilitytransistorswithairbridgestructure
_version_	1718419618374090752

Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure

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