Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
We analysis the RF performance of novel Sc-Doped GaN high-electron-mobility transistors (HEMTs) with asymmetric air-bridge structure by TCAD software. The maximum oscillating frequency (fMAX) which has been achieved in this work is 41.2 GHz and the cutoff frequency (fT) reached 30.2 GHz, while the H...
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Elsevier
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/b4c2a773ab48443a9d47a7026e00480f |
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