Transport properties of Cu2ZnSnS4
Temperature dependence of the resistivity, p(T), of five single crystalline p-Cu2ZnSnS4 samples is investigated in the interval of T ~ 30010 K. Below ~200 K, p(T) exhibits an activated behavior obeying the Mott variable-range hopping conductivity law between ~130150 K and~3070 K. Analysis of the...
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| Auteurs principaux: | , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/b4eee18983ec43598457a37fceab78c7 |
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