Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

The electronic behaviour of complex oxides such as LaNiO3 depends on many intrinsic and extrinsic factors, making it challenging to identify microscopic mechanisms. Here the authors demonstrate the influence of oxygen vacancies on the thickness-dependent metal-insulator transition of LaNiO3 films.

Guardado en:
Detalles Bibliográficos
Autores principales: M. Golalikhani, Q. Lei, R. U. Chandrasena, L. Kasaei, H. Park, J. Bai, P. Orgiani, J. Ciston, G. E. Sterbinsky, D. A. Arena, P. Shafer, E. Arenholz, B. A. Davidson, A. J. Millis, A. X. Gray, X. X. Xi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Q
Acceso en línea:https://doaj.org/article/b500f5d5b0634a8a90d6a798dfb3a2b5
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!